▎ 摘　　要

NOVELTY - The thin film transistor has a semiconductor active layer which is formed from the graphene provided with the carbon atoms and the lanthanide element. A grid line (1) is formed on a gate insulating layer (2) provided in upper surface of substrate. A gate is covered by the gate insulating layer. A drain electrode (8) is exposed by the through hole (10). The through hole and drain electrode are electrically connected by the pixel electrodes (11). USE - Thin film transistor of array substrate for display device (all claimed) such as LCD device and organic LED device. Uses include but are not limited to electronic paper, electronic poster, mobile phone, tablet personal computer, TV, electronic book, notebook computer, digital picture frame and automobile navigator. ADVANTAGE - The flexible display device can be formed by the semiconductor active layer of the thin film transistor. The resistance of graphene semiconductor active layer can be reduced, and the conductivity, stability and transparency for graphene semiconductor active layer can be improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the thin film transistor. Grid line (1) Gate insulating layer (2) Drain electrode (8) Through hole (10) Pixel electrode (11)