▎ 摘　　要

NOVELTY - Preparation of double-layered hexagonal graphene single crystal domain, involves: putting catalyst containing metal simple substance and alloy, into a chemical vapor deposition reaction chamber, then heating at 400-1100 degrees C, reacting at constant temperature for 0-60 minutes; introducing carbon, hydrogen and protective gas at gas flow rate of 1-1000 sccm, and reacting for 1 min to 20 hours; after completing the reaction, maintaining the gas flow, controlling cooling speed of 10-300 degrees C/minute, and obtaining a TK angle double layered hexagonal graphene single crystal domain. USE - For the preparation of double-layered hexagonal graphene single crystal domain which is used as a transistor and a light modulator in micro-nano electronic and photonic devices (claimed). ADVANTAGE - The method produces double-layered single crystal graphene domain with excellent quality, and double layer coverage of more than 90%; is simple and easy to control process. DETAILED DESCRIPTION - Preparation of double-layered hexagonal graphene single crystal domain, involves: putting catalyst containing metal simple substance and alloy, into a chemical vapor deposition reaction chamber, then heating at 400-1100 degrees C, reacting at constant temperature for 0-60 minutes; introducing carbon, hydrogen and protective gas at gas flow rate of 1-1000 sccm, and reacting for 1 min to 20 hours; after completing the reaction, maintaining the gas flow, controlling cooling speed of 10-300 degrees C/minute, and obtaining a TK angle double layered hexagonal graphene single crystal domain. The carbon source comprises carbon source gas, liquid carbon source and solid carbon source.