▎ 摘　　要

NOVELTY - The device has a metal plate for bearing a metal oxide semiconductor (MOS) transistor and is fixed on a radiator (3). A shielding shell (6) is arranged on the metal plate. The MOS transistor is located in a space enclosed by the shielding shell and the metal plate. A thermally conductive material is filled between the metal plate and the radiator. A radiation shielding component is arranged in the space and on outer side of the MOS transistor. The radiation shielding component is squeezed by the shielding shell, where the radiation shielding component is made of rubber. A graphene layer (5) is arranged on the radiator and is placed between the metal plate and the radiator. USE - Metal oxide semiconductor (MOS) transistor radiating device. Can be used in a switch power supply, inverter and sound products. ADVANTAGE - The MOS transistor is welded with the metal plate for e.g. copper plate, so that the heat generated by the metal-oxide-semiconductor (MOS) transistor is balanced on the copper plate. The device is adhered with an insulating graphene on the radiator so as to ensure that metal plate heat is balanced to the graphene. The metal plate and the graphene are made uniform and contact does not move. The rubber pad pressing metal plate makes the extruding surface large, and makes the aluminum plate and graphene uniform. The shielding shell, shielding electromagnetic radiation of metal plate, and metal plate at the same time, pressing the rubber pad to fix the metal plates, satisfies the heat of the MOS transistor of 100W power level. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a metal oxide semiconductor (MOS) transistor radiating device. 1Bolt 2Fixed aluminum profile radiator 3Radiator 4Radiating fan 5Graphene layer 6Shielding shell 7Threading hole