• 专利标题:   Electronic apparatus for top gate structure, has substrate, where grapheme sheet is formed through gate insulating film on substrate, and source electrode is formed in end of graphene sheet.
  • 专利号:   JP2013074208-A, JP5794075-B2
  • 发明人:   JIPPO H
  • 专利权人:   FUJITSU LTD, FUJITSU LTD
  • 国际专利分类:   H01L029/06, H01L029/786, H01L051/05, H01L051/30
  • 专利详细信息:   JP2013074208-A 22 Apr 2013 H01L-029/786 201330 Pages: 21 Japanese
  • 申请详细信息:   JP2013074208-A JP213470 28 Sep 2011
  • 优先权号:   JP213470

▎ 摘  要

NOVELTY - The electronic apparatus has a substrate, where a graphene sheet (23) is formed through a gate insulating film on the substrate. A source electrode is formed in an end of the graphene sheet, where a drain electrode is formed in another end of the graphene sheet. A gate electrode applies a gate voltage to the graphene sheet between a source region and a drain region, where a gate insulating film covers the graphene sheet between the source electrode and the drain electrode. A zigzag shaped edge part has a carbon atom, which comprises a bond, which is not bonded with another carbon atom. USE - Electronic apparatus for a top gate structure. ADVANTAGE - The gate electrode applies a gate voltage to the graphene sheet between a source region and a drain region, where a gate insulating film covers the graphene sheet between the source electrode and the drain electrode, and hence ensures forming a channel corresponding to the armchair end or a zigzag end in an efficient manner and forms a big conduction gap in the band structure of the graphene sheet. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing the electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic top view of an electronic apparatus. (Drawing includes non-English language text). Graphene sheet (23) Edges (23a1 to 23a3) Opening unit (23A) Drain electrode pattern (23d) Source electrode pattern (23S)