▎ 摘　　要

NOVELTY - The device has a first lens (8) whose pumping light is focused on a photoconductive antenna (9) to generate the terahertz wave, after a chopper (7) modulates the frequency. The terahertz wave is radiated onto a bias voltage controlled splitter FET (10). The terahertz near-field radiation of a defect cavity formed by the difference in electron concentration on the two-dimensional graphene layer of the semiconductor layer in the bias voltage controlled splitter FET is enhanced and is detected by the terahertz wave detection light. USE - Terahertz near-field radiation enhancement device based on two-dimensional electron concentration modulation. ADVANTAGE - The terahertz near-field radiation intensity is increased only by adjusting the concentration difference by changing the bias voltage, and the device is made easy to set up and operate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the terahertz near-field radiation enhancement device based on two-dimensional electron concentration modulation. Laser light source (1) Chopper (7) First lens (8) Photoconductive antenna (9) Bias voltage controlled splitter FET (10)