• 专利标题:   Perovskite optoelectronic device includes a lower electrode equipped on the substrate, an electron transport layer equipped on the lower electrode, a light absorption layer equipped on the electron transport layer and comprising perovskite.
  • 专利号:   WO2021137377-A1, KR2021085240-A, US2023031667-A1
  • 发明人:   KIM J Y, CHANG K, JI K, PARK M, PARK C R, SUNG S J, KIM J, CHANG K S, HWAN J, JIN S S
  • 专利权人:   LG DISPLAY CO LTD, UNIV SEOUL NAT R DB FOUND, UNIV SEOUL NAT R DB FOUND, LG DISPLAY CO LTD
  • 国际专利分类:   H01L051/00, H01L051/42
  • 专利详细信息:   WO2021137377-A1 08 Jul 2021 202163 Pages: 32
  • 申请详细信息:   WO2021137377-A1 WOKR009521 20 Jul 2020
  • 优先权号:   KR178075

▎ 摘  要

NOVELTY - Perovskite optoelectronic device includes a lower electrode (200) equipped on the substrate (100), an electron transport layer (300) equipped on the lower electrode, a light absorption layer (400) equipped on the electron transport layer and comprising perovskite, hole transport layer (500) equipped on the light absorption layer, and an upper electrode equipped on the hole transport layer. The one of the lower electrode and the upper electrode comprises graphene oxide stacked on a carbon nanotube. USE - Perovskite optoelectronic device. ADVANTAGE - The perovskite optoelectronic device is prepared with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and can also be applied to a flexible device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a perovskite optoelectronic device, which involves forming a lower electrode, an electron transport layer, and a light absorption layer including perovskite on a first substrate, forming carbon nanotubes, graphene oxide, and a hole transport layer on a second substrate, and forming the laminate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross-section view of a perovskite optoelectronic device. Substrate (100) Lower electrode (200) Electron transport layer (300) Light absorption layer (400) Hole transport layer (500)