• 专利标题:   Graphene device comprises a gate electrode, a source electrode, a drain electrode and a plasmonic pattern that is formed on the gate electrode, where multiple penetration holes are formed in the gate electrode.
  • 专利号:   KR2015040671-A
  • 发明人:   KYOUNG J S, JEONG H J, BYUN K E, LEE J H, HEO J S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/336, H01L031/112
  • 专利详细信息:   KR2015040671-A 15 Apr 2015 H01L-031/112 201529 Pages: 15
  • 申请详细信息:   KR2015040671-A KR119458 07 Oct 2013
  • 优先权号:   KR119458

▎ 摘  要

NOVELTY - The graphene device (100) comprises a gate electrode (160), a source electrode (140), a drain electrode (150) and a plasmonic pattern (170) that is formed on the gate electrode, where multiple penetration holes are formed in the gate electrode. A channel layer is formed with a drain electrode. A graphene sheet is formed between the source electrode and drain electrode. USE - Graphene device. ADVANTAGE - The graphene device comprises a gate electrode, a source electrode, a drain electrode and a plasmonic pattern that is formed on the gate electrode, where multiple penetration holes are formed in the gate electrode, and thus ensures simplified structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene device. Graphene device (100) Source electrode (140) Drain electrode (150) Gate electrode (160) Plasmonic pattern (170)