• 专利标题:   Preparation of graphene involves growing graphene layer on substrate which is uniformly coated with release layer, sticking graphene layer on transfer thin film, separating substrate, and forming graphene based on transfer thin film.
  • 专利号:   CN103318879-A, CN103318879-B
  • 发明人:   DU C, HUANG D, LI C, LI Z, SHAO L, SHI H, WEI D
  • 专利权人:   CHONGQING INST GREEN INTELLIGENT TECHN, CHONGQING MOXI TECHNOLOGY CO LTD
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103318879-A 25 Sep 2013 C01B-031/04 201402 Pages: 7 Chinese
  • 申请详细信息:   CN103318879-A CN10269686 28 Jun 2013
  • 优先权号:   CN10269686

▎ 摘  要

NOVELTY - Graphene layer is grown on a substrate which is uniformly coated with a release layer of release film layer, by membrane technology, and graphene layer is stuck on a transfer thin film. The substrate is finally separated by peeling, and graphene is formed based on the transfer thin film. The transfer thin film comprises a release adhesive layer and an anti-sticking thin film layer, where graphene layer is stuck on anti-sticking thin film layer through release adhesive layer. USE - Preparation of graphene (claimed). ADVANTAGE - During the process of growing graphene, the graphene does not need to grow on different target substrates according to requirements. The efficiency is improved during growth process, and flexibility in growth of graphene is increased.