▎ 摘　　要

NOVELTY - The detector has a silicon substrate which is covered with silicon oxide. One-dimensional indium arsenide nanowires (2) grown by molecular beam epitaxy are transferred on the silicon substrate that is covered with silicon oxide. The source and drain electrodes (4) and corresponding lead electrodes (5) are prepared in the extending direction of the one-dimensional indium arsenide nanowire. An aluminum oxide grid is grown on the conductive channel of the one-dimensional indium arsenide nanowire. A two-dimensional graphene conductive channel (1) is transferred in the distance between the two arms of the log periodic antenna. The two-dimensional graphene conductive channel completely covers the outside of the discrete gate electrode (3). USE - Room temperature dual-channel adjustable terahertz detector. ADVANTAGE - The detector adopts dual-channel, high-response and multi-dimensional controllable terahertz detection. The integration, maturity and repeatability of the device lays the device and theoretical foundation for the realization of room temperature, integrated, multi-channel, and adjustable terahertz detection research. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing room temperature dual-channel adjustable terahertz detector. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the room temperature dual-channel adjustable terahertz detector. Two-dimensional graphene conductive channel (1) One-dimensional indium arsenide nanowire (2) Discrete gate electrode (3) Source and drain electrode (4) Lead electrode (5)