▎ 摘　　要

NOVELTY - The apparatus (100a) has a switch element i.e. output switch, for providing an output for current flowing through the quantum dot graphene FET. A quantum dot graphene FET is biased to a back gate through an output connector element (14) connected to the back gate such that electrons or holes formed are trapped in a quantum dot and migrate to a channel of the quantum dot FET, where a drain to source voltage connected to the quantum dot graphene FET causes current proportional to charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel. USE - Apparatus for reading out QD-GFET/phototransistor based imaging sensors for X-ray imaging application. ADVANTAGE - The apparatus provides the QD-GFET based imaging sensors with reduced cost and power consumption as source-drain voltage needs to be connected for a period in which a signal is handled by an amplifier. The apparatus provides provision of a simple sampling circuitry without requiring of an amplifier circuitry for pixels. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a system for reading out quantum dot-graphene FET (QD-GFET) based imaging sensors (2) a method for reading out quantum-dot graphene FET based imaging sensors (3) a computer program comprising a set of instructions for reading out quantum dot FET based imaging sensors (4) a non-transitory memory medium comprising a set of instructions for reading out QD-GFET/phototransistor based imaging sensors. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of a system for reading out quantum dot FET based imaging sensors. Output connector element (14) Resistive element (15) Capacitive element (16) Operational amplifier (17) Charge-to-voltage or current-to-voltage transimpedance amplifier circuitry (20) Apparatuses for reading out quantum dot FET based imaging sensors (100a, 100b)