▎ 摘　　要

NOVELTY - Semiconductor device comprises a metal layer, and a semiconductor layer electrically contacting the metal layer and having a surface treated with a surface-treating element. The surface-treating element is an element having an electron affinity of about 4 eV or greater. Two-dimensional (2D) material layer is formed between the metal layer and the semiconductor layer and having a 2D crystal structure. USE - Semiconductor device. ADVANTAGE - The semiconductor device has improved electrical characteristics and durability by using 2D material layer, and prevents contact resistivity from increasing to reduce overall resistivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the relationship between an electron affinity of a surface-treating element and a surface dipole of a semiconductor layer. Semiconductor device (200) Metal layers (210a, 210b) Gate insulating film (240) Gate electrode (250) Spacer (260)