▎ 摘　　要

NOVELTY - A three-dimensional integrated circuit comprises semiconductor device, insulator (2140) formed on the semiconductor device, interconnect formed in the insulator, and graphene device formed on the insulator. USE - Three-dimensional integrated circuit for three-dimensional hybrid integration of graphene field-effect transistors and semiconductor based devices. ADVANTAGE - The performance of the integrated circuit is improved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) multi-layer integrated circuit; and (2) formation of three-dimensional integrated circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the portion of multilayer circuit including semiconductor device and multiple top-gated graphene devices. Interconnects (114) Insulator layer (2010) Dielectric layer (2011) Insulator (2140) Contact vias (2142)