• 专利标题:   Preparation of nano-silver loaded graphene composite material includes placing graphene film in reactor, heating, holding, introducing argon, pressurizing, feeding fluorine gas, cooling, depositing silver ion, filling inert gas and standing.
  • 专利号:   CN107694516-A
  • 发明人:   ZHU Y, SHAO R
  • 专利权人:   NANJING XUYURUI MATERIAL TECHNOLOGY CO
  • 国际专利分类:   B01J020/20, B01J020/30, C01B032/194, C23C014/30, C23C014/18
  • 专利详细信息:   CN107694516-A 16 Feb 2018 B01J-020/20 201825 Pages: 7 Chinese
  • 申请详细信息:   CN107694516-A CN10953871 13 Oct 2017
  • 优先权号:   CN10953871

▎ 摘  要

NOVELTY - Preparation of nano-silver loaded graphene composite material comprises placing graphene film in reactor, making graphene films run parallel to each other, heating, holding, introducing argon, pressurizing, feeding fluorine gas, keeping fluorine content in reactor to obtain fluorinated graphene film, cooling, feeding argon, discharging, adjusting temperature, depositing silver ion, using silver as target material, forming silver reactive gas source, filling inert gas, standing, repeating silver ion deposition, growing silver ion, cooling, introducing inert gas, cooling and taking out. USE - Method of preparing nano-silver loaded graphene composite material. ADVANTAGE - The material has simple synthesis process, improves work efficiency of silver ion deposition on the surface of the graphene film and quality of silver ion deposition operations, reduces processing cost of silver ion deposition operation, avoids exhaustion of silver ion deposition work and prevents agglomeration in deposition operation. DETAILED DESCRIPTION - Preparation of nano-silver loaded graphene composite material comprises placing graphene film in reactor, making graphene films run parallel to each other, heating at 200-600 degrees C for 3-5 minutes, holding for 3-10 minutes, introducing argon to the reactor, pressurizing for 1-3 minutes, feeding fluorine gas into the reactor, keeping fluorine content in reactor for 3-25 hours to obtain fluorinated graphene film, cooling to 200-400 degrees C, feeding argon to the reactor, discharging through negative pressure pump, adjusting temperature of reactor to 400-750 degrees C, depositing silver ion, using silver as target material, forming silver reactive gas source by electron beam bombardment, filling inert gas, standing for 5-10 minutes, repeating silver ion deposition 3 times, growing silver ion on the surface of fluorinated graphene film to obtain 0.1-0.5 nm silver ion layer, cooling, introducing inert gas for 60-400 seconds, cooling to room temperature and taking out.