▎ 摘　　要

NOVELTY - Regulating and controlling silicon carbide base epitaxial graphene electronic band gap comprises e.g. preparing epitaxy graphene sample, using SRIM software by the ion in the damage distribution, electric energy loss and core loss energy distribution, using ion beam to silicon carbide base epitaxial graphene sample for irradiation, the irradiation ion through entering into silicon carbide substrate graphene, the ion of ion beam irradiation time through produce electric energy deposition result in graphene lattice mechanism shift defect generation, partially irradiating ion. USE - The method is useful for regulating and controlling silicon carbide base epitaxial graphene electronic band gap (claimed). ADVANTAGE - The method uses ion irradiation method using graphene controllable generation of defect structure, so as to regulate and control graphene and electronic band gap, and overcomes traditional technique controllability and bad repeatability. DETAILED DESCRIPTION - Regulating and controlling silicon carbide base epitaxial graphene electronic band gap comprises (a) preparing epitaxy graphene sample, using SRIM software by the ion in the damage distribution, electric energy loss and core loss energy distribution, radiation iron of silicon carbide crystal is one of light ion and atom and hydrogen or helium and weight as the middle mass ion of 6-40 between the light ion energy is 25-500 keV, dosage is 1x 1013 to 1x 1017 ions/cm2, the middle mass ion energy is 500keV to 6MeV, dosage is 1x 1012 to 1x 1016 ions/cm2, the first character theory computation can defect the graphene structure, (b) using ion beam to silicon carbide base epitaxial graphene sample for irradiation, the irradiation ion through entering into silicon carbide substrate graphene and staying on substrate, the ion of ion beam irradiation time through produce electric energy deposition result in graphene lattice mechanism shift defect generation, partially irradiating ion and carbon atomic nucleus generating collision producing vacancy defect, after irradiation, forming with defect structure of epitaxy graphene, (c) respectively using metallographic microscope observation graphene and gold phase structure and irradiated by scanning electron microscope observation graphene irradiation before rear surface fold change, (d) measuring different ion irradiation of Raman spectrum, Raman spectrum of the G peak is characteristic peak of carbon sp2 construction, the D peak is Raman spectrum for defect peak, G peak intensity is IG, value is 1575-1585/cm, D peak intensity is ID, the value is 1345-1355/cm, calculated by ID/IG lattice defect amount of the graphene sample under different irradiation condition so as to defect structure along with the irradiation condition to obtain the change relation, and (e) measuring epitaxy using the band of infrared spectrum.