▎ 摘　　要

NOVELTY - Formation of graphene involves providing a non-catalyst substrate partially comprising a material which does not catalyze growth of graphene, in a reaction chamber, and directly growing graphene on a surface of the non-catalyst substrate based on injecting a reaction gas into the reaction chamber, in a plasma-enhanced chemical vapor deposition. The reaction gas comprises a carbon source having an ionization energy 10.6 eV or less. USE - Formation of graphene used for metal wiring for semiconductor device. ADVANTAGE - The method enables formation of graphene in short period of time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for plasma-enhanced chemical vapor deposition apparatus.