▎ 摘　　要

NOVELTY - A metal layer (1) is contacted with a carbide layer (2), and carbon (3) in the carbide layer is dissolved into metal layer by heating the metal layer and carbide layer. Carbon in the metal layer is deposited on the surface of the carbide layer in the form of graphene (7) by cooling the metal layer and carbide layer to obtain graphene substrate. USE - Manufacture of graphene substrate used for manufacturing semiconductor element e.g. complementary-type metal oxide. ADVANTAGE - The method efficiently and economically provides graphene substrate having high productivity and quality. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the manufacture process of graphene substrate. Metal layer (1) Carbide layer (2) Carbon (3) Metal (4) Graphene (7)