▎ 摘　　要

NOVELTY - A nitride semiconductor device (100, 200) comprises diamond substrate (10), 1st graphene layer (20) provided on diamond substrate, 2nd graphene layer (40) provided on 1st graphene layer, nitride semiconductor layer (50) provided on 2nd graphene layer, and nitride semiconductor element which has electrode provided on nitride semiconductor layer. The 1st and 2nd graphene layers are provided as interface layer between diamond substrate and nitride semiconductor layer, where interface layer is formed by joining 1st and 2nd graphene layers to each other. USE - A nitride semiconductor device. ADVANTAGE - The nitride semiconductor device has extremely high heat dissipation and is low cost. Since the silicon carbide substrate is not removed mechanically or chemically, the silicon carbide substrate, which is a hetero-epitaxial substrate of the nitride semiconductor layer, can be recycled; and the manufacturing cost of the nitride semiconductor device can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of nitride semiconductor device which involves (a) forming 1st graphene layer on diamond substrate, (b) forming 2nd graphene layer on silicon carbide substrate, (c) epitaxially growing nitride semiconductor layer on 2nd graphene layer, (d) separating silicon carbide substrate and nitride semiconductor layer, (e) carrying out 1st graphene layer nitride semiconductor layer side and joining diamond substrate and nitride semiconductor layer through 1st and 2nd graphene layers, and (f) forming electrode and forming nitride semiconductor element on the nitride semiconductor layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional diagram of the nitride semiconductor device structure. Diamond substrate (10) 1st graphene layer (20) 2nd graphene layer (40) Nitride semiconductor layer (50) Nitride semiconductor device (100, 200)