▎ 摘　　要

NOVELTY - The capacitor has an insulating layer (215) formed on a first conductive layer (205). A second conductive layer (220) is formed on the insulating layers. The first and second layers are composed of one or more layers of a first van der Waals material and a second van der waals material, respectively. The second layer is composed of layer of a third van derwaals material. An insulating lower layer is formed under the first layer, and insulating upper layer is placed on the second layer. A first layer of graphene is formed between the first and the second layers. A second layer of the graphene is placed between the second and the first layers. The first van der Waals material is a material selected from the group consisting of NbSe2, MoTe2, WTe2, TaS2, BSCCO, graphene, and combination. USE - Capacitor for use in quantum bit (claimed). ADVANTAGE - The performance of the quantum bit is enhanced, since the capacitor has relatively low loss. The loss of the capacitor is reduced, by the use of the van der Waals material. The electrical properties of the first and second conductive layers are improved, by forming the first conductive layer and the insulating layer of the second van der waals material in the same layer. The capacitor has improved performance, by using the same material for both the first electrode and the second electrode. The performance is enhanced by using a material with a relatively low dielectric constant. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a quantum bit. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a capacitor. 205First conductive layer 210Substrate 215Insulating layer 220Second conductive layer 225Electric field lines