▎ 摘　　要

NOVELTY - Wafer comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer (e.g. alumina, yttria, zirconia and/or yttrium-zirconium-zinc (YSZ) layer) provided across the insulating layer, where the insulating layer is silicon nitride and/or aluminum nitride layer, and the barrier layer has constant thickness of ≤ 50 nm and provides growth surface for the chemical vapor deposition (CVD) growth of uniform graphene (preferably obtained by atomic layer deposition (ALD) using water or ozone as a precursor). The barrier layer is alumina and further precursor for the ALD is trialkyl aluminum or trialkoxide aluminum, preferably trimethylaluminum, tris(dimethylamido)aluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate) or aluminum tris(acetylacetonate). USE - The wafer is useful: for CVD growth of uniform graphene at temperature in excess of 700° C; and in laminate which is used in electronic device (claimed). ADVANTAGE - The wafer: provides a wafer that is suitable for growing uniform graphene at a temperature in excess of 700 μ C; provides thinner insulating layers in the relatively thin barrier layer is sufficient to provide suitable insulation between the graphene and the silicon substrate without relying on the bulk of the insulating layer; and avoids risk through the use of silicon and/or aluminum nitride insulting layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: laminate using the wafer; electronic device using the laminate; manufacturing the wafer; and manufacturing the laminate.