▎ 摘　　要

NOVELTY - The device has a crystalline electro-optic layer which comprises a ferroelectric waveguide layer and barium titanate. A first waveguide (250) is embedded within the amorphous insulating cladding layer. A ridge structure is located in the electro-optic layer. An additional insulating cladding layer is located on the electro-optic layer. A second waveguide is embedded within the additional insulating cladding layer. The main portion comprises forming doped or vacancy containing strontium titanium oxide electrodes in contact with electro-optic layer and forming electrically conductive leads in contact with the strontium titanium oxide electrodes. The main portion comprises an electro-optic switch or modulator. USE - Electro-optic device such as phase shifter and switches. ADVANTAGE - The method provides a wafer stack with high precision and layer uniformity, with accuracies of up to single-atom resolution. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a wafer stack. Crystalline magnesium oxide seed layer (204) Barium titanate layer (206) Amorphous insulating layer (210) First waveguide (250)