• 专利标题:   Depositing nanoscale-thin film in preselected area on substrate for area-selective atomic layer deposition based on electron beam patterning of chemical functional groups, involves depositing layer of functionalizing molecule onto or adjacent to first surface of substrate.
  • 专利号:   US2023132011-A1
  • 发明人:   YOUNG M J, MASCHMANN M R
  • 专利权人:   UNIV MISSOURI
  • 国际专利分类:   C23C016/02, C23C016/20, C23C016/40, C23C016/455
  • 专利详细信息:   US2023132011-A1 27 Apr 2023 C23C-016/02 202338 English
  • 申请详细信息:   US2023132011-A1 US146043 23 Dec 2022
  • 优先权号:   US058103P, US146043

▎ 摘  要

NOVELTY - Depositing nanoscale-thin film in preselected area on substrate involves depositing layer of functionalizing molecule onto or adjacent to first surface of substrate; functionalizing first surface of substrate by focusing source of ionizing radiation onto layer of functionalizing molecule to create desired pattern of functionality with nano-scale spatial resolution on substrate; removing layer of functionalizing molecule; and depositing nanoscale-thin film onto functionalized first surface of substrate to form deposited nanoscale-thin film. USE - Method for depositing nanoscale-thin film in preselected area on substrate used for area-selective atomic layer deposition (AS-ALD) based on electron beam patterning of chemical functional groups. ADVANTAGE - The method enables to provide flexible control of growth area, high spatial resolution, higher contrast between growth and non-growth regions, and have improved mechanical, optical and electrical properties.