▎ 摘　　要

NOVELTY - The preparation method involves for preparing a field effect transistor structure of a gate layer, a dielectric layer, a source electrode and a drain electrode. The source electrode and the drain electrode is transferred by the graphene film. The graphene film is processed into conductive channel. The conductive channel is processed into graphene thin film surface of the conductive channel, which is prepared by graphite alkyne film. The graphite alkyne film is obtained by the photo electric device of the field effect transistor structure. USE - Preparation method for photoelectric device. ADVANTAGE - The preparation method realize optical signal and the adjustment of the electric signal to satisfy the complex application scene, which is widely applied to the artificial neural network. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a modulation method for photoelectric device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the method. (Drawing includes non-English language text).