• 专利标题:   Preparing silicon nitride heat-conducting ceramic material comprises modifying the Si3N4 powder in acid solution, aging modified powder, adding nano graphene, sintering auxiliary agent and alkaline solution, aging, mixing with monomer, crosslinking agent, dispersant and degreasing.
  • 专利号:   CN113831140-A, CN113831140-B
  • 发明人:   XIE N, LIU W, WANG Y, LI P, YIN R
  • 专利权人:   UNIV HUNAN TECHNOLOGY
  • 国际专利分类:   C04B035/584, C04B035/638, C04B035/645
  • 专利详细信息:   CN113831140-A 24 Dec 2021 C04B-035/584 202215 Chinese
  • 申请详细信息:   CN113831140-A CN11094214 17 Sep 2021
  • 优先权号:   CN11094214

▎ 摘  要

NOVELTY - Preparing Si3N4 heat-conducting ceramic material comprises (1) modification by pickling the Si3N4 powder in the acid solution to obtain the modified Si3N4 powder, (2) preparing gel state liquid follows by aging the modified Si3N4 powder, adding nano graphene, sintering auxiliary agent and alkaline solution, mixing uniformly, then aging, neutralizing, then mixing with monomer, crosslinking agent, dispersant, catalyst fully to obtain Si3N4, sintering auxiliary agent and nano graphene-formed gel suspension, (3) shaping by adding the gel state liquid the mold cavity, adding initiator to form blank, (4) dehydrating and degreasing: dehydrating the blank, then heating and degreasing, the nano graphene is uniformly distributed in the blank, sintering by hot-pressing and sintering the blank processed in step (4) to obtain Si3N4 heat-conducting ceramic material. USE - The method is useful for preparing silicon nitride heat-conducting ceramic material. ADVANTAGE - The material forms high uniformity in the gel state liquid trace graphene distribution structure, realizes the high uniform distribution of graphene, realizes the blank forming, finally reaches the in-situ distribution of active graphene in the silicon nitride substrate, realizes oxygen removal of the grain boundary, reduces the glass phase, improves phase transition rate, reduces the problem of blank deformation cracking caused by uneven distribution of directly added carbon, limits the lattice oxygen removing effect and improves the heat conducting performance and intensity of the material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for Si3N4 heat-conducting ceramic material prepared by above method.