• 专利标题:   Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.
  • 专利号:   WO2019187987-A1, JP2019178021-A, TW201942053-A, KR2020135506-A
  • 发明人:   RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T
  • 专利权人:   TOKYO ELECTRON LTD, TOKYO ELECTRON LTD
  • 国际专利分类:   C01B032/186, C23C016/511, H05H001/46, B01J023/00, C01B032/182
  • 专利详细信息:   WO2019187987-A1 03 Oct 2019 C01B-032/186 201979 Pages: 47 Japanese
  • 申请详细信息:   WO2019187987-A1 WOJP008151 01 Mar 2019
  • 优先权号:   JP067448, KR730747

▎ 摘  要

NOVELTY - Manufacture of graphene structure involves preparing a substrate to be processed, forming a graphene structure on the surface of the substrate by plasma chemical vapor deposition (CVD) using a plasma of a process gas containing carbon containing gas and an oxidizing gas in the state in which the surface of the substrate does not have a catalytic function. USE - Manufacture of graphene structure. Uses include but are not limited to wiring, field-effect-transistor, barrier film and device materials such as fuel cell, field-electron-emission source, and sensor. ADVANTAGE - The method produces crystalline graphene structure without using catalyst metal layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for apparatus for forming the graphene structure, which consists of a processing container which accommodates the substrate, heater which heats the substrate, plane slot antenna which has a slot arranged on the processing container through the microwave permeable board made up of dielectric material which comprises the ceiling wall of the processing container, microwave introduction mechanism for introducing a microwave in the processing container through the slot and microwave permeable board, gas introducing mechanism for supplying the process gas containing carbon containing gas and an oxidizing gas in the processing container, exhaustion mechanism which exhausts the inside of the processing container, control unit which controls the heater, microwave introduction mechanism, gas introducing mechanism, and exhaustion mechanism, after the substrate to be processed is carried into the processing container.