• 专利标题:   Photodetector has graphene channel layer which is provided opposite to and spaced apart from gate electrode and not having pi-binding, and having nanoparticle provided on first graphene layer.
  • 专利号:   US2013285018-A1, KR2013121451-A, KR1532311-B1, US9263607-B2
  • 发明人:   YOO W J, LI H, LI H M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01L031/028, H01L031/09, B82Y015/00, B82Y099/00, H01L029/06, H01L031/0232, H01L031/036, H01L031/112
  • 专利详细信息:   US2013285018-A1 31 Oct 2013 H01L-031/028 201375 Pages: 26 English
  • 申请详细信息:   US2013285018-A1 US747920 23 Jan 2013
  • 优先权号:   KR044667

▎ 摘  要

NOVELTY - The photodetector has a graphene channel layer (60) which is provided opposite to and spaced apart from a gate electrode and does not have pi-binding. Two electrodes are provided to contact the two sides of the graphene channel layer. The sides are provided opposite to each other. The graphene channel layer is provided with a nanoparticle (40) provided on a first graphene layer (34). The nanoparticle is made of gold (Au) and silver (Ag). USE - Photodetector. ADVANTAGE - The graphene channel can be provided with stacking of several single graphene layers. The single graphene layers can be simply physically stacked and chemical bonded such as pi-binding, does not exist the several single graphene layers. The graphene channel can be provided with zero bandgap and ambipolar characteristics without mobility degradation, so that the carrier transport capability of the photodetector can be improved. The nanoparticles can cause plasmon resonance exist between the single graphene layers. Incident light can be scattered due to the nanoparticles, and a range in which the incident light is irradiated can be wider. The local field around the nanoparticles can be strengthened, photon absorbance increases in proportion to the number of the single graphene layers. Thus the photocurrent generation and photo-reactivity of the photodetector can be increased. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the process for manufacturing photodetector. Substrate (30) Insulation layer (32) Graphene layer (34) Nanoparticle (40) Graphene channel layer (60)