▎ 摘　　要

NOVELTY - A semiconductor structure has a semiconductor substrate (10) comprising a single crystalline silicon-containing semiconductor material, a semiconductor carbide layer (50) located on semiconductor substrate, and a graphene layer (60) including 1-4 graphene monolayers, which abuts semiconductor carbide layer. The graphene layer (60) has a (0001) crystalline orientation along a surface normal of a top surface of the semiconductor substrate. The semiconductor carbide layer has a thickness less than 10 nm. USE - Semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a vertical cross-sectional view of the semiconductor substrate. Semiconductor substrate (10) Dielectric material portions (12,22,32) Semiconductor carbide layer (50) Graphene layers (60,62)