▎ 摘　　要

NOVELTY - The detector (100) has a semiconductor device that includes a semiconductor layer (4), a first insulating film (3a) arranged on the semiconductor layer and an opening portion (OP). A two-dimensional material layer (1) is electrically connected to the semiconductor layer at the opening portion and extended from the top of the opening to the first insulating film. A first electrode (2a) is electrically connected to the two-dimensional material layer. A second electrode (2b) is electrically connected to the semiconductor layer. A second insulating film (3b) is set in contact with the two-dimensional material layer. A control electrode (2c) is connected to the two-dimensional material layer via the second insulating film. USE - Electromagnetic wave detector of electromagnetic wave detector assembly (claimed) for on-vehicle sensor, used as camera for visible light images during daytime and infrared camera at night. ADVANTAGE - The Fermi level of the two-dimensional material layer is changed. Since the light absorption is increased, the detection sensitivity of the electromagnetic wave is improved. Since the lowering of the mobility of the electric field effect of the electromagnetic wave detector is suppressed, the performance of the electromagnetic wave detector is improved. Since the plasmon resonance is generated in the graphene nano ribbon, the sensitivity of the electromagnetic wave detector is improved. The reading speed of the optical carrier generated at the p-n junction interface is improved, and the response speed of the electromagnetic wave detector is improved. The dispersion of the contact between the two-dimensional material layer and semiconductor layer is reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the electromagnetic wave detector. Two-dimensional material layer (1) Electrodes (2a,2b) Control electrode (2c) Insulating films (3a,3b) Semiconductor layer (4) Electromagnetic wave detector (100) Opening portion (OP)