• 专利标题:   Graphene thin film processing method, involves performing ozone or UV treatment to adhere graphene thin film on base, and adhering thin film on substrate by non-metallic inorganic acid, where UV treatment is performed for specific time.
  • 专利号:   CN103996458-A, CN103996458-B
  • 发明人:   JIANG H, SHI H, ZHU P, ZHONG D, HUANG D, CUI H
  • 专利权人:   CHONGQING MOXI TECHNOLOGY CO LTD, CHINESE ACAD SCI CHONGQING GREEN INTEL, CHINESE ACAD SCI CHONGQING GREEN INTEL, CHONGQING GRAPHENE TECH CO LTD
  • 国际专利分类:   H01B013/00
  • 专利详细信息:   CN103996458-A 20 Aug 2014 H01B-013/00 201475 Pages: 8 Chinese
  • 申请详细信息:   CN103996458-A CN10237974 30 May 2014
  • 优先权号:   CN10237974

▎ 摘  要

NOVELTY - The method involves performing ozone or UV treatment to adhere a graphene thin film on a base. The graphene thin film is adhered on a substrate by utilizing non-metallic inorganic acid i.e. nitric acid. Temperature range of an inner chamber of an ozone generator is 25-100 degree Celsius. The ozone or UV treatment is performed for 0.1-10 min. Wave length of UV light is 100-300 nm. Power of the UV light is 1-300 w. The graphene thin film is adhered on a nitric acid liquid surface. USE - Graphene thin film processing method. ADVANTAGE - The method enables improving resistance of the graphene thin film so as to maintain long-term stability at high temperature. The method enables performing a graphene film subsequent patterning process in a convenient manner. The method enables improving light transmittance property and application range of the graphene thin film.