▎ 摘　　要

NOVELTY - Growing high-quality graphene on an insulating substrate at a low temperature, involves pressing an ultra-thin single crystal copper foil and an insulating substrate by using a pressing machine under certain temperature and pressure conditions, where the pressed copper foil is tightly attached to the surface of the substrate and cannot fall off. The substrate coated with the copper foil is placed in a three-temperature-zone gradient temperature control thermal chemical vapor deposition (CVD) system for graphene low-temperature growth. The front temperature zone in the system is set to be high temperature for pyrolyzing a carbon source, a middle temperature zone is set between the front temperature zone and the rear temperature zone to be used as a temperature buffer zone, and a rear temperature zone is set to be a low temperature zone for growing graphene. The PMMA (polymethyl methacrylate) is spin-coated on the upper surface of the substrate. USE - Method for growing high-quality graphene on insulating substrate at low temperature. ADVANTAGE - The graphene grown by the method has high quality and less damage, is suitable for a substrate, which does not resist high temperature, has a simple process, and also used for large-scale industrial production. DETAILED DESCRIPTION - Growing high-quality graphene on an insulating substrate at a low temperature, involves pressing an ultrathin single crystal copper foil and an insulating substrate by using a pressing machine under certain temperature and pressure conditions, where the pressed copper foil is tightly attached to the surface of the substrate and cannot fall off. The substrate coated with the copper foil is placed in a three-temperature-zone gradient temperature control thermal CVD system for graphene low-temperature growth. The front temperature zone in the system is set to be high temperature for pyrolyzing a carbon source, a middle temperature zone is set between the front temperature zone and the rear temperature zone to be used as a temperature buffer zone, and a rear temperature zone is set to be a low temperature zone for growing graphene. The PMMA is spin-coated on the upper surface of the substrate, after the graphene growth is completed and dried the PMMA to be used as a supporting layer of the graphene. The substrate is immersed into a copper corrosive liquid, where the corrosive liquid is slowly corrode the copper below from the edge of the graphene inwards through the PMMA layer, until the copper is completely removed. The residual corrosive liquid is rinsed on the substrate by using deionized water, dried, and cleaned PMMA by using acetone and isopropanol to finally obtain high-quality graphene growing on the insulating substrate at a low temperature.