▎ 摘　　要

NOVELTY - The method involves forming a surface of a silicon substrate (1) and a silicon hole (8) with an inner wall of an insulating layer (2). A barrier layer (3) is deposited on the insulating layer. A graphene auxiliary layer (4) is formed on a surface of the barrier layer. The silicon substrate is fixed on a surface of the graphene auxiliary layer. A sticking dry film is exposed and developed to form a dry film layer (5). A seed layer (6) is deposited on the silicon hole and the surface of the dry film layer. The silicon hole is connected with a conductive material (7). USE - Multilayer graphene auxiliary layer based three-dimensional silicon through hole vertical interconnecting method. ADVANTAGE - The method enables utilizing the graphene material to obtain better electrical performance, and reducing problem of high through-silicon via (TSV) resistance value and power consumption caused by skin effect and atomic migration of the graphene, and utilizing a copper as the TSV signal transmission channel so as to improve performance and reliability of a three dimensional-TSV structure, and improving technology node, lower TSV vertical interconnection and signal fidelity. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a multilayer graphene auxiliary layer based three-dimensional silicon through hole interconnecting method. Silicon substrate (1) Insulating layer (2) Barrier layer (3) Graphene auxiliary layer (4) Dry film layer (5) Seed layer (6) Conductive material (7) Silicon hole (8)