• 专利标题:   Manufacturing organic thin film transistor by forming graphene layer on surface of metal basal plate, covering organic solution, heating graphene layer, forming organic semiconductor nanowire, and transferring to target substrate.
  • 专利号:   CN107068864-A, WO2018188131-A1, US2018337356-A1, CN107068864-B, US10319925-B2
  • 发明人:   LIANG B, WANG W
  • 专利权人:   WUHAN CHINA STAR OPTOELECTRONICS TECHNO, WUHAN CHINA STAR OPTOELECTRONICS TECHNO, WUHAN CHINA STAR OPTOELECTRONICS TECHNOL, WUHAN CHINA STAR OPTOELECTRONICS TECHNOL
  • 国际专利分类:   H01L027/32, H01L051/40, H01L051/00, H01L051/05
  • 专利详细信息:   CN107068864-A 18 Aug 2017 H01L-051/40 201764 Pages: 10 Chinese
  • 申请详细信息:   CN107068864-A CN10245003 14 Apr 2017
  • 优先权号:   CN10245003

▎ 摘  要

NOVELTY - Manufacture of organic thin film transistor includes forming graphene layer on surface of metal basal plate, covering organic solution on surface of graphene layer, heating graphene layer, forming organic semiconductor nanowire, and transferring to target substrate. USE - Method for manufacturing organic thin film transistor (claimed). ADVANTAGE - The method has high capacity of display device and fast and high-quality large-scale transfer of organic semiconductor nanowire of metal substrates to target substrates, satisfies mass production requirement, and reduces manufacturing process time and production cost.