▎ 摘　　要

NOVELTY - A chemical vapor deposition graphene planar micro-supercapacitor preparing method involves pressing and cleaning a catalytic metal substrate, using a chemical vapor deposition technique to grow graphene on the pretreated catalytic metal substrate, transferring to a target substrate to obtain a sample having a graphene-target substrate, designing a lithographic mask for the interdigital structure, depositing a metal current collector gold on the graphene-target substrate sample using an E-Beam device to obtain a sample having a structure of a current collector graphene-target substrate, placing sample of the current collector graphene-target substrate on a silicone machine, filling with photoresist, immersing in a mixed solution of potassium iodide and iodine to remove the gold layer not protected by the photoresist to obtain the finished product. USE - Method for preparing chemical vapor deposition graphene planar micro-supercapacitor. ADVANTAGE - The method enables preparing chemical vapor deposition graphene planar micro-supercapacitor with high integration and degree of flexibility, improved utilization area of the electrode material, reduced obstacle of transporting charge in transportation and increased frequency response for wearable devices. DETAILED DESCRIPTION - A chemical vapor deposition graphene planar micro-supercapacitor preparing method involves pressing and cleaning a catalytic metal substrate, using a chemical vapor deposition technique to grow graphene on the pretreated catalytic metal substrate, transferring to a target substrate to obtain a sample having a graphene-target substrate, designing a lithographic mask for the interdigital structure, depositing a metal current collector gold on the graphene-target substrate sample using an E-Beam device to obtain a sample having a structure of a current collector graphene-target substrate, placing sample of the current collector graphene-target substrate on a silicone machine, filling with photoresist, placing exposed photoresist-catch-graphene-target substrate sample in the developing solution to obtain a fork-like finger type resist-collector-graphene-target substrate sample, immersing in a mixed solution of potassium iodide and iodine to remove the gold layer not protected by the photoresist, etching the graphene at interdigitated gap by an oxygen plasma etching machine to prevent short circuit of the positive and negative plates to obtain a graphene microelectrode sample of the photoresist, soaking graphene microelectrode sample with photoresist in acetone solution to remove the photoresist to obtain a graphene microelectrode sample, dropping polyvinyl alcohol gel electrolyte on a graphene microelectrode to obtain the finished product.