▎ 摘　　要

NOVELTY - The method involves depositing a graphene layer on a substrate. A patterned structure is formed on the substrate. The patterned structure is partially covered on the graphene layer. The substrate is annealed. An insulating layer is deposited on the substrate before annealing the substrate. The insulating layer is covered on the graphene layer. The insulating layer is removed after annealing the substrate. Graphene oxide is deposited on the substrate. The Graphene oxide is partially covered on the patterned structure. Hydrophilic treatment process is performed on the substrate. USE - Substrate annealing method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a substrate.