▎ 摘　　要

NOVELTY - Transferring graphene thin film involves: growing graphene using metal film catalyst, and chemical vapor deposition method to prepare graphene on metal thin film by metal annealing using hydrogen and argon gas at 600-1100 degrees C for a period of time, then methane, ethylene or acetylene carbon source, followed by reduction where metal thin film from the reaction furnace is covered graphene; removing metal film side of graphene, mixing graphite with metal thin film frame which is placed in acid solution; taking graphene from solution, placing in de-ionized water cleaning and drying. USE - For transferring graphene to thin film (claimed). ADVANTAGE - The method does not need to cover the graphene poly(methylmethacrylate) (PMMA) layer such as a transfer vector, so it will not introduce a pollutant, and can reduce the damage of the surface of graphite alkene, and peels off process is the direct chemical reaction between the acid solution and the metal thin film. The method provides the metal thin film on the upper and lower surfaces of the graphene at the same time with the metal membrane separation and high efficiency, it does not need external power supply, there is no need to use electrochemical reaction. The method is simple, not relate to harmful chemical substance; is capable of multi-sequence repeat using metal substrate and greatly reduces the cost; has large application value in the industrial field of large scale for preparing graphene. The method can greatly reduce the transfer process of pollution and damage of the graphene and the metal substrate can be used for several times to reduce the production cost. DETAILED DESCRIPTION - Transferring graphene thin film involves: growing graphene according to metal film catalyst, using chemical vapor deposition method to prepare graphene on the metal thin film by metal annealing using hydrogen and argon gas at 600-1100 degrees C for a period of time, then the methane, ethylene or acetylene carbon source, where the carbon source cracks at high temperature, and then with defect on the metal film surface under the catalysis of metal film of graphene, and is reduced to room temperature and so on, where the metal thin film from the reaction furnace is covered graphene; removing metal film side of the graphene, mixing the graphite with the metal thin film frame which is placed in the acid solution, to obtain metal thin film on the upper and lower surfaces of the graphene at the same time the metal thin film separation; taking the graphene from the solution, placed in de-ionized water cleaning and drying and directly transferred to the various substrates.