• 专利标题:   Electrostatic chuck device of graphene electrode used in semiconductor wafer processing device, has electrode layer that is formed between dielectric layer and insulation layer, where insulation layer is set on metal substrate.
  • 专利号:   CN205406504-U
  • 发明人:   CHENG R, XU D, YANG K, TANG N, ZHANG M, XU Y, YANG P, ZHU Y, HAN W
  • 专利权人:   BEIJING UPRECISION TECHNOLOGY CO LTD
  • 国际专利分类:   H01L021/683
  • 专利详细信息:   CN205406504-U 27 Jul 2016 H01L-021/683 201656 Pages: 6 Chinese
  • 申请详细信息:   CN205406504-U CN20163992 03 Mar 2016
  • 优先权号:   CN20163992

▎ 摘  要

NOVELTY - The utility model claims an electrostatic chuck device of graphene electrode, belonging to the semiconductor wafer processing technology area, comprising a dielectric layer, electrode layer, insulation layer and metal substrate, dielectric layer formed on the insulation layer and upper part, the electrode layer formed in between the dielectric layer and insulation layer, the insulation layer is set with upper on the metal substrate, the dielectric layer is sapphire, ceramic series material, the electrode layer is graphene material. This utility model new electrode using graphene material layer, a lifting guide heat capacity of the electrostatic chuck to facilitate wafer by rapid heating or cooling. At the same time, which avoids of high temperature sintering process, electrode layer without deformation, improving of homogeneity for the wafer force.