• 专利标题:   Adjustable gain peak featured germanium-silicon photoelectric detector, has graphene signal lead directly connected with germanium active layer, and silicon waveguide layer formed with mode conversion structure.
  • 专利号:   CN111129200-A
  • 发明人:   ZHANG H, XIAO X, WANG L, HU X, CHEN D, LI W
  • 专利权人:   WUHAN GUANGGU INFORMATION OPTOELECTRONIC
  • 国际专利分类:   H01L031/02, H01L031/101
  • 专利详细信息:   CN111129200-A 08 May 2020 H01L-031/101 202044 Pages: 7 Chinese
  • 申请详细信息:   CN111129200-A CN11382300 27 Dec 2019
  • 优先权号:   CN11382300

▎ 摘  要

NOVELTY - The detector has a bandwidth gain component formed with a germanium active layer. An adjustable bandwidth gain assembly comprises a graphene signal lead and a control electrode. The control electrode applies variable voltage to the graphene signal lead to realize adjustment of gain peak, where the control electrode is made of electro-conductive material. The graphene signal lead is directly connected with the germanium active layer, where the graphene signal lead comprises a folded U-shaped structure and zigzag-shaped structure. A silicon waveguide layer comprises a mode conversion structure. USE - Adjustable gain peak featured germanium-silicon photoelectric detector. ADVANTAGE - The detector has better bandwidth gain. DESCRIPTION OF DRAWING(S) - The drawing shows an exploded perspective view of an adjustable gain peak featured germanium-silicon photoelectric detector.