• 专利标题:   Method for preparing graphene single crystal film for graphene electronic device, involves forming copper single crystal film on sapphire single crystal substrate, forming nickel film, subjecting to high temperature annealing.
  • 专利号:   CN108447773-A
  • 发明人:   PENG H, LIU Z, DENG B, TANG J
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   H01L021/02
  • 专利详细信息:   CN108447773-A 24 Aug 2018 H01L-021/02 201861 Pages: 14 Chinese
  • 申请详细信息:   CN108447773-A CN10253431 26 Mar 2018
  • 优先权号:   CN10253431

▎ 摘  要

NOVELTY - A graphene single crystal film preparing method involves forming a copper single crystal film on a sapphire single crystal substrate, forming a nickel film on the copper single crystal film, subjecting nickel/copper /sapphire to high temperature annealing to obtain a copper-nickel single crystal alloy layer and growing graphene single crystal thin film on the copper-nickel single crystal alloy layer by atmospheric pressure chemical vapor deposition. USE - Method for preparing graphene single crystal film for graphene electronic device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene single crystal film produced by the method.