• 专利标题:   Method for forming three-dimensional graphene pattern, involves laminating oxide layer in upper side of substrate, coating metal layer in exterior portion of oxide layer, and depositing graphene film in exterior portion of metal layer.
  • 专利号:   KR2012009326-A, KR1221965-B1
  • 发明人:   GWAN K J, HO J J, HYE L J, HYEOK C J, GEUN C D, DON K G, KIM J K, JEONG J H, LEE J H, CHOI J H, CHOI D G, KIM K D
  • 专利权人:   KOREA INST MACHINERY MATERIALS
  • 国际专利分类:   B82B003/00, H01L021/205
  • 专利详细信息:   KR2012009326-A 01 Feb 2012 B82B-003/00 201218 Pages: 10
  • 申请详细信息:   KR2012009326-A KR071518 23 Jul 2010
  • 优先权号:   KR071518

▎ 摘  要

NOVELTY - The method involves laminating an oxide layer in an upper side of a substrate. A metal layer is coated in an exterior portion of the oxide layer. A graphene film is deposited in an exterior portion of the metal layer by a chemical vapor deposition (CVD). The oxide layer is made of one among silicon dioxide and titanium dioxide. The metal layer is made of one among cobalt, platinum, iridium, ruthenium, nickel and copper. USE - Method for forming a three-dimensional (3D) graphene pattern. ADVANTAGE - The method enables forming a three-dimensional graphene pattern with better electrical conductivity in an easy manner. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a three-dimensional graphene pattern.