• 专利标题:   Graphene transistor has charge donator that is arranged on main surface of graphene layer, and is provided with impurity electric charge, and counter ions whose impurity electric charge is provided with code different from electric charge.
  • 专利号:   WO2020170799-A1
  • 发明人:   MIYAKAWA N, SHINAGAWA A, USHIBA S, KIMURA M, MATSUMOTO K, ONO T
  • 专利权人:   MURATA MFG CO LTD, UNIV OSAKA
  • 国际专利分类:   G01N027/414, H01L029/16, H01L029/66, H01L029/786, H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   WO2020170799-A1 27 Aug 2020 H01L-051/30 202073 Pages: 23 Japanese
  • 申请详细信息:   WO2020170799-A1 WOJP004066 04 Feb 2020
  • 优先权号:   JP029080

▎ 摘  要

NOVELTY - The graphene transistor has a graphene layer (3) that is made of graphene. The drain electrode (21) and source electrode (22) are electrically connected with the graphene layer. An electric charge donator is arranged on a main surface of the graphene layer, and is provided with an impurity electric charge. An impurity electric charge of counter ions is provided with a code different from the electric charge. USE - Graphene transistor such as graphene FET. ADVANTAGE - The time-dependent change of the characteristic of the graphene layer is suppressed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional diagram of the graphene transistor. Insulated substrate (1) Graphene layer (3) Insulated foreign material (4) Drain electrode (21) Source electrode (22)