▎ 摘　　要

NOVELTY - Preparation of single crystal graphene involves depositing copper having a thickness (N1) on a substrate, depositing nickel having a thickness (N2) on copper, annealing the copper- and nickel-deposited substrate in a gas atmosphere (G1) and a temperature (T11) for time (M1) to obtain a copper-nickel alloy substrate sample, oxidizing the copper-nickel alloy substrate sample under a gas atmosphere (G2) and a temperature (T2) for time (M2) to obtain an oxidized substrate sample, placing the oxidized substrate sample in a chemical vapor deposition furnace, rapidly raising the temperature in the furnace to a temperature (T3), introducing a gas (G3) into the furnace, stopping introduction of gas (G3) after growing on the oxidized substrate sample for time (M3), and rapidly cooling to temperature (T4) by adopting a gas (G4) protection. USE - Preparation of single crystal graphene used for semiconductor material. ADVANTAGE - The method produces single crystal graphene by pre-oxidizing the surface of the copper-nickel alloy, thus realizing super-fast and flat growth of the single-crystal graphene.