• 专利标题:   Method for improving charge mobility of charge channel layer, involves passivating portion or all of the surface of the charge channel layers with an amorphous hydrocarbon thin film.
  • 专利号:   KR2021157756-A
  • 发明人:   TAE K, KIM D, YI J H
  • 专利权人:   UNIV IND ACADEMIC COOP IN CHUNGNAM NAT, UNIST ULSAN NAT SCI TECHNOLOGY INST
  • 国际专利分类:   H01L029/49, H01L021/02, H01L021/768, H01L029/51, H01L029/786, H01L051/00, H01L051/05
  • 专利详细信息:   KR2021157756-A 29 Dec 2021 H01L-029/49 202207 Pages: 19
  • 申请详细信息:   KR2021157756-A KR075954 22 Jun 2020
  • 优先权号:   KR075954

▎ 摘  要

NOVELTY - The method involves passivating a unit or all of a surface of a charge channel layer by an amorphous hydrocarbon thin film. The thin film is directly grown on the surface of the channel layer or is passivated by transferring the thin film to the surface. A passivation layer is made of the thin-film. The channel layer is selected from silicon, metal oxide semiconductor, organic semiconductor and graphene. A dielectric constant of the film is 10 or more. An electrode is a semiconductor electrode, metal electrode, transparent electrode or a flexible electrode. USE - Method for improving charge mobility of charge channel layer. ADVANTAGE - The charge mobility is remarkably increased by simply passivating the charge channel layer with an amorphous hydrocarbon thin film that can be grown in a simple process using inexpensive raw materials. DESCRIPTION OF DRAWING(S) - The drawing shows a graph showing electrical characteristics of a field-effect transistor including a transferred amorphous hydrocarbon thin film.