▎ 摘　　要

NOVELTY - The method involves forming a graphene layer (120) on a first substrate, transferring the graphene layer from the first substrate to a second substrate (130), and forming a single-crystalline film on the graphene layer. USE - Manufacturing method of semiconductor device (claimed), such as an LED or a multi-junction solar cell. ADVANTAGE - The graphene layer protects the donor wafer from damage, thus allowing multiple uses and reducing cost. Graphene-based layer transfer can increase or maximize reusability because it creates an atomically smooth release surface. The graphene layer can be reused for multiple growth/exfoliation cycles without the need for a polishing step and without damaging the graphene, due to its mechanical robustness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view which illustrates a method of fabricating a semiconductor device using a graphene-based layer transfer process. Graphene layer (120) Second substrate (130) Epilayer (140)