▎ 摘　　要

NOVELTY - Growing graphene comprises: providing a metal substrate; annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and introducing a gas mixture to grow graphene over the metal substrate, where the gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and the introducing step is carried out at a pressure up to 100 mbar. USE - The process is useful for growing graphene which is used as a single crystalline, monolayer graphene domain, in a graphene material (all claimed), and in electronic and photonic devices. ADVANTAGE - The process: provides the graphene domain which exhibits less than 1.2 degrees rotation of a graphene lattice direction across the graphene domain (claimed), eliminates or reduces the gram boundary scattering, thus providing the devices with excellent performance with highly uniform electrical characteristics; and allows large scale integration of graphene devices with high yield and high reproducibility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a single crystalline, monolayer graphene domain formed by the process as above per se, and having a lateral size of at least 2.4 mm.