▎ 摘　　要

NOVELTY - Film comprises: a base layer having amino groups; and a reduced graphene oxide layer formed on the base layer. USE - The film is useful in semiconductor devices including field effect transistors (all claimed), where semiconductor devices are used in display devices. ADVANTAGE - The film provides semiconductor devices having large on/off ratio and a simple structure, at low cost and with high yield. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a reduced graphene oxide layer including many islands of carbon atoms, where the islands are interconnected by many conductive channels to form a network structure, and the conductive channels have a width of less than or equal to 10 nm; (2) a semiconductor device comprising a conductive substrate (31), an insulating film formed on the conductive substrate, a base layer including amino groups, and a reduced graphene oxide layer formed on the base layer; (3) manufacturing a film comprising forming a base layer including amino groups, and forming a reduced graphene oxide layer on the base layer; (4) forming a reduced graphene oxide layer comprising forming many islands of carbon atoms, and interconnecting the islands of carbon atoms with many conductive channels to form a network structure of the graphene oxide layer; and (5) manufacturing a semiconductor device comprising providing a conductive substrate, forming an insulating film on the conductive substrate, forming a layer including amino groups on the insulating film, and forming a reduced graphene oxide layer on the layer including amino groups. DESCRIPTION OF DRAWING(S) - The figure shows a sectional view showing a field effect transistor. Substrate (31) Insulative film (32) Semiconductor graphene oxide (34) Source electrode (37) Drain electrode (38)