• 专利标题:   Graphene film preparation comprises providing oxidized graphene solution, drying, maintaining under protection of gas and at high temperature, and reducing.
  • 专利号:   CN102173596-A
  • 发明人:   CHEN Y, HUANG Q
  • 专利权人:   HUANG Q, SHANGHAI BUNTOO IND CO LTD
  • 国际专利分类:   C03C017/22, C04B041/50
  • 专利详细信息:   CN102173596-A 07 Sep 2011 C03C-017/22 201167 Pages: 10 Chinese
  • 申请详细信息:   CN102173596-A CN10611061 23 Dec 2010
  • 优先权号:   CN10611061

▎ 摘  要

NOVELTY - Preparing graphene film comprises providing oxidized graphene solution, drying the solution to obtain a layer of film, and then maintaining for more than 1 hour under protection of gas and at high temperature, and reducing the oxidized graphene to obtain the graphene film. USE - Method for preparing graphene film. ADVANTAGE - The method is simple and convenient to operate, has no pollution caused by chemical reduction, and protects the environment. The prepared graphene film has a resistivity of 1500 Ohms/sq, which is smaller than the graphene film prepared by the chemical reducing method used currently, and light transmission under the wavelength of 780 nm of 70%, which is similar to fluorine doped tin oxide (FTO) and indium tin oxide (ITO); and can replace the traditional conductive glass. It has also high film conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) transparent material attached with graphene film comprising a substrate attached with the graphene film; and (2) preparing transparent material attached with graphene film comprising firstly subjecting the substrate to hydrophilic treatment, and then depositing a layer of oxidized graphene solution on the substrate, drying, and maintaining for more than 1 hour under protection of gas and at high temperature, and reducing the oxidized graphene.