• 专利标题:   Chemical vapor deposition apparatus for preparing thin film materials e.g. graphene, has main chamber that is for preparation of film material, and subchamber is for scouring of boron source.
  • 专利号:   CN107099782-A
  • 发明人:   DONG G, ZHANG X, TANG Q
  • 专利权人:   CHANGZHOU GUOCHENG NEW MATERIAL TECHNOLO
  • 国际专利分类:   C23C016/26, C23C016/34, C23C016/44
  • 专利详细信息:   CN107099782-A 29 Aug 2017 C23C-016/26 201761 Pages: 6 Chinese
  • 申请详细信息:   CN107099782-A CN10096667 23 Feb 2016
  • 优先权号:   CN10096667

▎ 摘  要

NOVELTY - The apparatus has a main chamber (1), a sub-chamber (2), a heating device (3), a temperature measuring device, an air supply device, a suction device, (4), a flap valve (5) and a boron nitride evaporation source (6). The main chamber is used for the preparation of the film material, and the subchamber is used for the scouring of the boron source. USE - Chemical vapor deposition apparatus for preparing thin film materials such as graphene and hexagonal boron nitride. ADVANTAGE - The rapid cooling is achieved that effectively reduces the cooling process of carbon atoms in the precipitation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for the preparation of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of a chemical vapor deposition apparatus. Main chamber (1) Sub-chamber (2) Heating device (3) Suction device (4) Flap valve (5) Boron nitride evaporation source (6)