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  • 专利标题:   Growing graphene thin film on copper foil involves subjecting copper foil to plasma cleaning, de-contaminating copper foil, removing oxidation layer from copper foil, electrochemically polishing copper foil.
  • 专利号:   CN105018897-A, CN105018897-B
  • 发明人:   JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K
  • 专利权人:   CHANGZHOU 2D CARBON GRAPHENE MATERIAL CO, CHANGZHOU 2D CARBON GRAPHENE MATERIAL CO
  • 国际专利分类:   B08B007/00, C23C016/02, C25F003/22
  • 专利详细信息:   CN105018897-A 04 Nov 2015 C23C-016/02 201613 Pages: 14 Chinese
  • 申请详细信息:   CN105018897-A CN10164674 22 Apr 2014
  • 优先权号:   CN10164674

▎ 摘　　要

NOVELTY - Growing graphene thin film on copper foil involves subjecting copper foil to plasma cleaning and then de-contaminating copper foil. The oxidation layer is removed from copper foil. The copper foil is electrochemically polished. The plasma oxidation is carried out to remove oxidized layer from surface of copper foil. The copper foil is polished to obtain graphene thin film on copper foil. USE - Method for growing graphene thin film on copper foil (claimed). ADVANTAGE - The method enables to grow graphene thin film on copper foil in efficient manner that prevents yellowing of copper foil, and has high integrity and high homogeneity.