• 专利标题:   Graphene/boron nitride/zinc oxide ultraviolet detector, comprises back electrode, zinc oxide layer, boron nitride layer, graphene layer and positive electrode, where zinc oxide layer is n-type or p-type doped zinc oxide.
  • 专利号:   CN104617180-A, CN104617180-B
  • 发明人:   CHEN H, LIN S, LI X, XU W, XU Z, WANG P, WU Z, ZHANG C, ZHONG H
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   H01L031/02, H01L031/028, H01L031/0296, H01L031/0352, H01L031/102, H01L031/18
  • 专利详细信息:   CN104617180-A 13 May 2015 H01L-031/102 201557 Pages: 7 Chinese
  • 申请详细信息:   CN104617180-A CN10021262 16 Jan 2015
  • 优先权号:   CN10021262

▎ 摘  要

NOVELTY - A graphene/boron nitride/zinc oxide ultraviolet detector comprises back electrode, zinc oxide layer, boron nitride layer, graphene layer and positive electrode. USE - Graphene/boron nitride/zinc oxide ultraviolet detector. ADVANTAGE - The graphene/boron nitride/zinc oxide ultraviolet detector has high transparency, high electrical conductivity, excellent insulation and light transmission property, excellent UV detection properties and high UV detector response, and can be prepared in simple and cost effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing graphene/boron nitride/zinc oxide ultraviolet detector, which involves doping back electrode on n-type or p-type doped zinc oxide, transferring 1-20 atomic boron nitride layer on another side of n-type or p-type doped zinc oxide to obtain a doped material, followed by transferring 1-10 atomic layers of graphene layer to the doped material, and producing a frontage electrode on graphene layer.