• 专利标题:   Producing pellicle for extreme ultraviolet lithography involves forming silicon carbide layer on one side of substrate, forming metal catalyst layer over the silicon carbide layer followed by removing metal catalyst layer.
  • 专利号:   WO2022010201-A1, KR2022006887-A, KR2482649-B1
  • 发明人:   YU L, CHO S J, KIM K S, SEO K W, MOON S Y, KIM J K, YOU J D, SEO K
  • 专利权人:   FINE SEMITECH CORP, FST CO LTD
  • 国际专利分类:   G03F001/62, G03F001/22
  • 专利详细信息:   WO2022010201-A1 13 Jan 2022 202210 Pages: 17
  • 申请详细信息:   WO2022010201-A1 WOKR008492 05 Jul 2021
  • 优先权号:   KR084866

▎ 摘  要

NOVELTY - Producing a pellicle involves forming a silicon carbide layer on one side of the substrate. A metal catalyst layer is formed over the silicon carbide layer. A solid carbon source layer is formed over the metal catalyst layer. The mixture is heat-treated by a portion of the solid carbon source layer is supersaturated while diffusing into the metal catalyst layer to form a graphene layer in the silicon carbide layer and the metal catalyst layer followed by removing the metal catalyst layer. USE - Method for producing pellicle for extreme ultraviolet lithography. ADVANTAGE - The method enables producing pellicle with simple, high transmittance for extreme ultraviolet rays, excellent mechanical strength, and high thermal conductivity.