• 专利标题:   Enhanced graphene near infrared broad-band light absorption structure comprises a metal substrate, a dielectric layer, a metal micro/nano array, and a graphene sequentially stacked from bottom to top.
  • 专利号:   CN110534608-A
  • 发明人:   LIU Y, DU M
  • 专利权人:   SUZHOU ZHONGWEI PHOTOELECTRIC CO LTD
  • 国际专利分类:   B81B007/04, C01B032/182, H01L031/0236, H01L031/028, H01L031/0352, H01L031/09
  • 专利详细信息:   CN110534608-A 03 Dec 2019 H01L-031/09 201997 Pages: 7 Chinese
  • 申请详细信息:   CN110534608-A CN10713287 02 Aug 2019
  • 优先权号:   CN10713287

▎ 摘  要

NOVELTY - Enhanced graphene near infrared broad-band light absorption structure comprises a metal substrate (4), a dielectric layer (3), a metal micro/nano array (2), and a graphene (1) which are sequentially stacked from bottom to top. USE - Used as enhanced graphene near infrared broad-band light absorption structure. ADVANTAGE - The structure has enhanced the local field on the surface of graphene and light of graphene absorptivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the enhanced graphene near-infrared wide-band light absorption structure, comprising (i) providing metal substrate, (ii) depositing dielectric layer on the metal substrate, (iii) preparing a metal micro/nano array on the dielectric layer, and/or (iv) transferring the graphene to the metal micro/nano array. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the enhanced graphene near infrared broad-band light absorption structure. Graphene (1) Metal micro/nano array (2) Dielectric layer (3) Metal substrate (4)